1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c70v v dgr t j = 25 c to 150 c; r gs = 1 m 70 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c (mosfet chip capability) 180 a i d(rms) external lead (current limit) 76 a i dm t c = 25 c, note 1 720 a i ar t c = 25 c 180 a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 70 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 6 m note 1 single mosfet die 98585a (6/99) isoplus 247 tm g d hiperfet tm power mosfets isoplus247 tm (electrically isolated back surface) features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<25pf) low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly space savings high power density g = gate d = drain s = source * patent pending isolated back surface* ixfr 180n07 v dss = 70 v i d25 = 180 a r ds(on) = 6 m t rr 250 ns preliminary data sheet ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a note 2 55 90 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 4600 pf c rss 2550 pf t d(on) 65 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 90 ns t d(off) r g = 1 (external) 140 ns t f 55 ns q g(on) 420 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 65 nc q gd 220 nc r thjc 0.30 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 180 a i sm repetitive; 720 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, note 1 1.3 v t rr 250 ns q rm 1.2 c i rm 10 a i f = 50a,-di/dt = 100 a/ s, v r = 50 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixfr 180n07 isoplus 247 (ixfr) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 s 13.21 13.72 .520 .540 t 15.75 16.26 .620 .640 u 1.65 3.03 .065 .080 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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